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AUTOMOTIVE GRADE
PD - 97460
Features
l l l l l l l
AUIRF1404Z AUIRF1404ZS AUIRF1404ZL
HEXFET(R) Power MOSFET
V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 3.7m 180An 160A
Advanced Process Technology Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
D
G S
ID (Package Limited)
D D
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D
G TO-220AB AUIRF1404Z
D
S G
D
S G D
S
D2Pak AUIRF1404ZS
TO-262 AUIRF1404ZL
G Gate
D Drain
S Source
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified.
Parameter
ID @ TC = 25C ID @ TC = 25C IDM PD @TC = 25C VGS EAS EAS (tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
180n 120 160 710 200
Units
A
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche CurrentA Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw
W W/C V mJ A mJ
h
d
1.3 20 330 480 See Fig.12a, 12b, 15, 16 -55 to + 175
g i
C 300 10 lbfyin (1.1Nym)
Thermal Resistance
RJC RCS RJA RJA Junction-to-Case
l i
Parameter
Typ.
--- 0.50 --- ---
Max.
0.75 62 40 ---
Case-to-Sink, Flat Greased Surface Junction-to-Ambient
i
k
Units
C/W
Junction-to-Ambient (PCB Mount) j
HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
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AUIRF1404Z/S/L
Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
40 --- --- 2.0 170 --- --- --- --- --- 0.033 2.7 --- --- --- --- --- --- --- --- 3.7 4.0 --- 20 250 200 -200
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A V VDS = VGS, ID = 250A V VDS = 25V, ID = 75A A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V
e
Dynamic Electrical @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 100 31 42 18 110 36 58 4.5 7.5 4340 1030 550 3300 920 1350 150 --- --- --- --- --- --- --- --- --- --- --- --- --- --- nC
Conditions
ID = 75A VDS = 32V VGS = 10V VDD = 20V ID = 75A RG = 3.0 VGS = 10V Between lead,
e e
ns
nH
6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 32V, = 1.0MHz VGS = 0V, VDS = 0V to 32V
pF
f
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 28 34 160 A 750 1.3 42 51 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 20V di/dt = 100A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.11mH RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value is determined from sample failure population, starting T J = 25C, L = 0.11mH, RG = 25, IAS = 75A, VGS =10V.
This is only applied to TO-220AB pakcage. This is applied to D2Pak, when mounted on 1" square PCB (FR4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. TO-220 device will have an Rth value of 0.65C/W. R is measured at TJ approximately 90C. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 160A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.(Refer to AN1140) http://www.irf.com/technical-info/appnotes/an-1140.pdf
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AUIRF1404Z/S/L
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220AB N/A N/A MSL1 Class M4 AEC-Q101-002 Class H1C AEC-Q101-001 Class C3 AEC-Q101-005 Yes
Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant
TO-262 D PAK
2
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report.
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AUIRF1404Z/S/L
1000
1000
VGS
ID, Drain-to-Source Current (A)
100
10
ID, Drain-to-Source Current (A)
15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
TOP
15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
TOP
VGS
100
1
4.5V 20s PULSE WIDTH Tj = 25C
0.1 1 10 100
4.5V
10 0.1 1
0.1
20s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
200
T J = 175C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current ( A)
T J = 25C
160
T J = 175C
100
120 T J = 25C 80
10
40
1 4.0 5.0 6.0 7.0
VDS = 15V 20s PULSE WIDTH
8.0 9.0 10.0 11.0
VDS = 15V 20s PULSE WIDTH 0 40 80 120 160
0 ID, Drain-to-Source Current (A)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance Vs. Drain Current
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AUIRF1404Z/S/L
8000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID= 75A VDS= 32V VDS= 20V
16
6000
C, Capacitance (pF)
Ciss
4000
12
8
2000
Coss Crss
4
0 1 10 100
0 0 40 80 120 160 Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10000
1000.0
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
1000
100.0
T J = 175C
100 100sec 10 Tc = 25C Tj = 175C Single Pulse 0 1 10
10.0 T J = 25C 1.0
1msec
0.1 0.2 0.6 1.0
VGS = 0V 1.4 1.8
1
10msec 100 1000
VDS , Drain-toSource Voltage (V)
VSD, Source-toDrain Voltage (V)
nce
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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AUIRF1404Z/S/L
200 Limited By Package 150
2.0
RDS(on) , Drain-to-Source On Resistance
ID = 75A VGS = 10V
ID, Drain Current (A)
1.5
100
(Normalized)
1.0
50
0 25 50 75 100 125 150 175 T C , Case Temperature (C)
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Normalized On-Resistance Vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1
0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01 0.1
0.001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF1404Z/S/L
15V
600
EAS, Single Pulse Avalanche Energy (mJ)
TOP
VDS
L
DRIVER
500
BOTTOM
31A 53A 75A
ID
RG
20V VGS
D.U.T
IAS tp
+ V - DD
400
A
0.01
300
200
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
100
0 25 50 75 100 125 150 175
Starting T J , Junction Temperature (C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
VGS(th) Gate threshold Voltage (V)
4.0
ID = 250A
3.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
2.0
50K 12V .2F .3F
1.0
D.U.T. + V - DS
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Temperature ( C )
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit
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AUIRF1404Z/S/L
10000
Avalanche Current (A)
1000
Duty Cycle = Single Pulse
100
0.01
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax
0.05
10
0.10
1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
400
EAR , Avalanche Energy (mJ)
300
TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A
200
100
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed 175 Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy Vs. Temperature
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AUIRF1404Z/S/L
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
*
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
RD
V DS V GS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-V DD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
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AUIRF1404Z/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF1404Z
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, LeadFree
Lot Code
TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF1404Z/S/L
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRF1404ZS
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF1404Z/S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRF1404ZL
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF1404Z/S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197) MAX.
26.40 (1.039) 24.40 (.961) 3
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF1404Z/S/L
Base part number AUIRF1404Z AUIRF1404ZL AUIRF1404ZS Package Type Standard Pack Form Tube Tube Tube Tape and Reel Left Tape and Reel Right Quantity 50 50 50 800 800 Complete Part Number
TO-220 TO-262 D2Pak
AUIRF1404Z AUIRF1404ZL AUIRF1404ZS AUIRF1404ZSTRL AUIRF1404ZSTRR
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AUIRF1404Z/S/L
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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